Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric
De-Cheng HsuMing-Tsong WangJoseph Ya‐min LeePi-Chun Juan
Abstract
Metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric were fabricated. The time dependent dielectric breakdown (TDDB) of ZrO2 capacitors was studied. It was observed that the Weibull slopes were independent of the capacitor area. The Weibull slopes had no clear dependence on ZrO2 thickness. The TDDB of ZrO2 follows the E model. The activation energy Ea was linearly dependent on the electric field and the field acceleration parameter γ is independent of temperature.
Metrics
Citation History
Topics
Related Documents
Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric
Chih-Hsiang HsuMing-Tsong WangJoseph Ya‐min Lee
Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy2O3 gate dielectric
Sheng-Chih ChangShao-You DengJoseph Ya‐min Lee
Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric
Chun-Heng ChenIngram Yin-ku ChangJoseph Ya‐min LeeFu‐Chien Chiu
Characteristics of TiN gate metal-oxide-semiconductor field effect transistors
M. WittmerJ. R. NoserH. Melchior
Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors
Bigang MinSiva Prasad DevireddyZeynep Çelik‐ButlerA. ShanwareKeith GreenJames J. ChambersM. V. VisokayLuigi Colombo