M.M. El-NahassFarid Abed‐MeraimAdel AttiaH.A.M. AliR SignerskiJ KalinowskiI DavoliS StizzaA RiadA El-SamahyS KhalilA RiadM KorayemT Abdel-MalikT Abdel-MalikR Abdel-LatifM El-ShabasyM Abdel-HamidR GouldA HassanA SalehR GouldA HassanS JamesP VasudevanH BergerG JanicheN GrachovskayaA AbassR KrierColinsA HassanA GouldRayH SolimanM El NahassA FaridA FaragA ShazlyK NarayananC MenonA SimonF XavierF XavierA AhmadR CollinsP FieldingF GutmannA AhmadR CollinsA BelghachiR CollinsR GouldR GouldC HamannW MycielskiB ZiolkowskaA LipinskiN AmarR GouldA SalehA SussmanM LambertR GouldM RahmanN AmarR GouldA SalehR GouldR Blyth
Thin films of H 2 Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature.The dark electrical resistivity calculations were carried out at different temperatures in the range 298-473 K. Measurements of thermoelectric power confirm that H 2 Pc thin films behave as a p-type semiconductor.The current density-voltage characteristics of H 2 Pc at room temperature showed ohmic conduction mechanism at low voltages.At higher voltages the space-chargelimited conduction (SCLC) accompanied by an exponential trap distribution was dominated.The temperature dependence of current density allows determination of some essential parameters such as the hole mobility (µ h ), the total trap concentration (N t ), the characteristic temperature (T t ) and the trap density P (E).
M.M. El-NahassA. M. FaridA.A. AttiaH.A.M. Ali
M.M. El-NahassK.F. Abd-El-RahmanA.A.M. FaragA.A.A. Darwish
H. S. SolimanA.M.A. El-BarryN.M. KhosifanM. M. El Nahass
H. S. SolimanA. M. A. El-BarryN. M. KhosifanM. M. El Nahass