Thickness-Dependent Characteristics of Aluminium-Doped Zinc Oxide Nanorod-Array-Based, Ultraviolet Photoconductive Sensors

Abstract

Aluminium (Al)-doped zinc oxide (ZnO) nanorod arrays were prepared on a seed-layer-coated glass substrate by a sonicated sol–gel immersion method. We have shown, for the first time, that the thickness of the nanorod arrays can be increased incrementally without greatly affecting the diameter of the nanorods, by increasing the number of immersions. The field-emission scanning electron micrographs and thickness measurements revealed that the nanorods had diameters within the range from 40 to 150 nm and thicknesses from 629 to 834 nm with immersion times ranging from 1 to 5 h. The photoluminescence (PL) spectra revealed that the ZnO nanorod quality was enhanced with long immersion times as shown by an improvement in the ratio of the UV peak intensity to the visible emission peak intensity, or IUV/Ivis. The thickness-dependent characteristic of Al-doped ZnO nanorod-array-based, UV photoconductive sensors was studied; minimising the thickness of the nanorod arrays was found to provide high responsivity and good performance. Our experiments showed that a decrease in the thickness of the nanorod arrays improved the responsivity and response time of the UV sensors, with a maximum responsivity of 2.13 A/W observed for a 629-nm-thick nanorod film.