InAs Nanowire Transistors Using Solution-Grown Nanowires with Acceptor Doping

Abstract

InAs nanowire field effect transistors have been fabricated using solution-synthesized wires, with average diameters of 20 nm. Wires using either Zn and Cd dopants, both acceptors and both incorporated at relatively high doping densities, have been studied. The Zn-doped wires showed n-channel transistor characteristics, and were unipolar with relatively large on/off ratios. The Cd-doped wires were ambipolar, with on/off ratios below 10 at room temperature. This study expand the possible applications of InAs nanowire devices in high speed electronic circuits in contrast to the existing reports of only n type conductivity behavior of InAs nanowire devices.