JOURNAL ARTICLE
High-density static ESFI MOS memory cells
Abstract
A static CMOS memory cell - 2.4 mil 2 - with high-rated load resistors using epitaxial silicon films on insulators has been developed. A 4k-bit memory integrated on a 12 mm 2 chip has been found to show a better overall performance than dynamic memories.
Keywords:
Resistor CMOS Chip Computer science Electrical engineering Optoelectronics Physics Engineering
Metrics
1
Cited By
0.57
FWCI (Field Weighted Citation Impact)
2
Refs
0.78
Citation Normalized Percentile
Is in top 1%
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Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advanced Memory and Neural Computing
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
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