Temperature Dependence of Electrical Properties of SrBi 2 Ta 2 O 9 Thin Films

Abstract

Temperature-dependent electrical properties of SrBi 2 Ta 2 O 9 thin films fabricated by chemical solution deposition were investigated. The dynamic field-polarization measurement revealed that the remanent polarization and coercive field decreased more rapidly at high temperatures. While the small signal dielectric constant exhibits a broad peak, the dielectric anomaly is observed at 291 °C. These behaviors are discussed in relation to weak domain wall pinning.