High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer
Shigekazu TomaiMami NishimuraMasayuki ItoseMasahide MatuuraMasashi KasamiShigeo MatsuzakiHirokazu KawashimaFutoshi UtsunoKoki Yano
Abstract
We have developed a high-mobility and high-processability oxide semiconductor using amorphous In2O3–SnO2–ZnO (a-ITZO) as the channel material. An a-ITZO thin-film transistor (TFT) was fabricated by a back-channel-etch process. Its field effect mobility was more than 20 cm2 V-1 s-1 and its subthreshold swing was 0.4 V s-1, which makes it a promising candidate for next-generation TFTs.
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