A 0.18 μm SiGe BiCMOS receiver and transmitter chipset for SONET OC-768 transmission systems

M. Meghelli; Alexander Rylyakov; S.J. Zier; M. Sorna; D. Friedman

doi:10.1109/isscc.2003.1234279

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A 0.18 μm SiGe BiCMOS receiver and transmitter chipset for SONET OC-768 transmission systems

M. Meghelli Alexander Rylyakov S.J. Zier M. Sorna D. Friedman

Year: 2003 Vol: 1 Pages: 230-490

DOI: 10.1109/isscc.2003.1234279

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Abstract

A BiCMOS CDR/1:4-DEMUX and CMU/4:1-MUX chipset targeting 40-43 Gb/s optical communications is implemented in 0.18 /spl mu/m SiGe. At 43 Gb/s and up to 100/spl deg/C chip temperature, both ICs operate at BER <10/sup -15/ and <210 fs RMS clock jitter. The receiver and transmitter chips dissipate 2.8 W and 2.3 W, respectively, from a -3.6 V supply.

Keywords:

Chipset BiCMOS Synchronous optical networking Multiplexer Jitter Transmitter Optical Carrier transmission rates Chip Electrical engineering Transmission (telecommunications) Physics Electronic engineering Computer science Engineering Telecommunications Multiplexing Transistor Voltage

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A 0.18 μm SiGe BiCMOS receiver and transmitter chipset for SONET OC-768 transmission systems

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