Observations of electron and hole transport through thin SiO2 films

doi:10.1016/0026-2714(83)91477-4

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Observations of electron and hole transport through thin SiO2 films

Year: 1983 Journal: Microelectronics Reliability Vol: 23 (1)Pages: 196-196 Publisher: Elsevier BV

DOI: 10.1016/0026-2714(83)91477-4

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Keywords:

Noise (video) Electron Silicon Physics Hot electron Flicker noise Atomic physics Johnson–Nyquist noise Condensed matter physics Optoelectronics Materials science Electrical engineering Computational physics Noise figure Quantum mechanics Computer science Engineering

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Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Observations of electron and hole transport through thin SiO2 films

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