JOURNAL ARTICLE

Sb-Mediated Si heteroepitaxial growth on Ge(001)

J WANG

Year: 2004 Journal:   Surface Science   Publisher: Elsevier BV
Keywords:
Nucleation Scanning tunneling microscope Crystallography Island growth Materials science Silicon Layer (electronics) Surface finish Surface diffusion Dimer Substrate (aquarium) Isotropy Epitaxy Diffusion Chemistry Condensed matter physics Molecular physics Nanotechnology Optics Geology Composite material Optoelectronics Adsorption Physics

Metrics

0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
0
Refs
0.35
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Surface and Thin Film Phenomena
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Electron and X-Ray Spectroscopy Techniques
Physical Sciences →  Materials Science →  Surfaces, Coatings and Films

Related Documents

JOURNAL ARTICLE

Sb-Mediated Si heteroepitaxial growth on Ge(001)

J. WangM. LiEric I. Altman

Journal:   Surface Science Year: 2004 Vol: 560 (1-3)Pages: 12-26
JOURNAL ARTICLE

Sb-mediated homoepitaxial growth on Ge(001)

Mo LiEric I. Altman

Journal:   Surface Science Year: 2003 Vol: 537 (1-3)Pages: 205-216
JOURNAL ARTICLE

Electrostatic implications for Sb-mediated growth of Ge on the Si(001) surface

Stephen J. JenkinsG. P. Srivastava

Journal:   Surface Science Year: 1997 Vol: 384 (1-3)Pages: L886-L891
JOURNAL ARTICLE

Kinetics of the heteroepitaxial growth of Ge on Si(001)

Vy YamV. Le ThanhP. BoucaudD. DébarreD. Bouchier

Journal:   Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Year: 2002 Vol: 20 (3)Pages: 1251-1258
JOURNAL ARTICLE

Sb-surfactant mediated growth of Ge nanostructures

A. PortavoceA. RondaIsabelle Berbézier

Journal:   Materials Science and Engineering B Year: 2002 Vol: 89 (1-3)Pages: 205-210
© 2026 ScienceGate Book Chapters — All rights reserved.