Growth of Ca<inf>3</inf>Ta(Ga<inf>0.5</inf>Al<inf>0.5</inf>)<inf>3</inf>Si<inf>2</inf>O<inf>14</inf> piezoelectric single crystal and the piezoelectric properties

Abstract

We grew Ca ₃ Ta(Ga _0.5 Al _0.5 ) ₃ Si ₂ O ₁₄ piezoelectric single crystal with a diameter of 1 inch by Czochralski method and the physical properties were investigated. The grown crystal indicated high transparency with the yellow color. In addition, there was no crack in the crystal. By the powder X-ray diffraction measurement, the grown crystal was a single phase of langasite-type structure and lattice parameters, a- and c-axes lengths, were decreased by the Al substitution. The back-reflection Laue image revealed that the grown crystal was single crystal and crystalline facets derived from (0 0 1) plane. Actual chemical composition of grown crystal was little different from the nominal composition with stoichiometric composition.