Exciton Diffusion in a Monolayer MoS2-WS2 Lateral Heterostructure

Jing-Wen Huang; Monica Lorenzon; Ji Hyun Kang; P. Chen; Xiangfeng Duan; Edward S. Barnard; C. W. Wong; Alexander Weber‐Bargioni

doi:10.1364/cleo_at.2019.jw2a.29

JOURNAL ARTICLE

Exciton Diffusion in a Monolayer MoS2-WS2 Lateral Heterostructure

Jing-Wen Huang Monica Lorenzon Ji Hyun Kang P. Chen Xiangfeng Duan Edward S. Barnard C. W. Wong Alexander Weber‐Bargioni

Year: 2019 Journal: Conference on Lasers and Electro-Optics Vol: 9 Pages: JW2A.29-JW2A.29

DOI: 10.1364/cleo_at.2019.jw2a.29

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Abstract

In this paper, we observed preliminary exciton diffusion signature in a WS2-MoS2 lateral heterostructure at room temperature. Within center MoS2 the diffusion appears to be 300 nm, along the WS2-MoS2 edge the diffusion appears to be more than 2μm.

Keywords:

Heterojunction Exciton Monolayer Diffusion Enhanced Data Rates for GSM Evolution Materials science Condensed matter physics Optoelectronics Nanotechnology Computer science Physics Telecommunications Quantum mechanics

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Molecular Junctions and Nanostructures

Physical Sciences → Engineering → Electrical and Electronic Engineering

Exciton Diffusion in a Monolayer MoS2-WS2 Lateral Heterostructure

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