JOURNAL ARTICLE

MICROSTRUCTURAL CHARACTERIZATION OF V-DEFECTS IN INGAN/GAN MULTIQUANTUM WELLS

H. WANGG. JINQiuhong Tan

Year: 2020 Journal:   Письма в Журнал экспериментальной и теоретической физики Vol: 111 (5-6(3))Pages: 301-302   Publisher: Springer Science+Business Media
Keywords:
Characterization (materials science) Materials science Optoelectronics Quantum well Gallium nitride Optics Nanotechnology Physics Layer (electronics) Laser

Metrics

0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
0
Refs
0.35
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Oil and Gas Production Techniques
Physical Sciences →  Engineering →  Ocean Engineering
Offshore Engineering and Technologies
Physical Sciences →  Engineering →  Ocean Engineering

Related Documents

JOURNAL ARTICLE

Microstructural Characterization of V-Defects in InGaN/GaN Multiquantum Wells

H. WangGui JinQiaolai Tan

Journal:   Journal of Experimental and Theoretical Physics Letters Year: 2020 Vol: 111 (5)Pages: 264-267
JOURNAL ARTICLE

Persistent photoconductivity in InGaN/GaN multiquantum wells

Han-Bo YangTai‐Yuan LinY. F. Chen

Journal:   Applied Physics Letters Year: 2001 Vol: 78 (3)Pages: 338-340
JOURNAL ARTICLE

Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films

Ig-Hyeon KimHyeong-Soo ParkYong-Jo ParkTaeil Kim

Journal:   Applied Physics Letters Year: 1998 Vol: 73 (12)Pages: 1634-1636
© 2026 ScienceGate Book Chapters — All rights reserved.