Lateral Quantum Dot in Si/SiGe Realized by a Schottky Split-Gate Technique

T. Berer; D. Pachinger; G. Pillwein; M. Muhlberger; H. Lichtenberger; G. Brunthaler; F. Schaffler

doi:10.1109/istdm.2006.1716032

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Lateral Quantum Dot in Si/SiGe Realized by a Schottky Split-Gate Technique

T. Berer D. Pachinger G. Pillwein M. Muhlberger H. Lichtenberger G. Brunthaler F. Schaffler

Year: 2006 Journal: 2006 International SiGe Technology and Device Meeting Pages: 1-2

DOI: 10.1109/istdm.2006.1716032

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Abstract

Our experiments demonstrate that Schottky-barrier reducing mechanisms can be overcome by adequately designed Si/SiGe heterostructures and that single electron transistor (SET) functionality can be achieved in modulation-doped Si/SiGe heterostructures with a standard split-gate approach that can easily be integrated into an array of coupled SETs

Keywords:

Heterojunction Optoelectronics Materials science Schottky barrier Schottky diode Modulation (music) Quantum dot Silicon-germanium Transistor Logic gate Silicon Electronic engineering Electrical engineering Physics Voltage Engineering

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Quantum and electron transport phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Lateral Quantum Dot in Si/SiGe Realized by a Schottky Split-Gate Technique

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