KTiOAsO4 Thin Films Prepared by Pulsed Laser Deposition

Yu Liao; Xiu Wang

doi:10.1002/(sici)1521-4079(199908)34:7<825::aid-crat825>3.3.co;2-n

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KTiOAsO4 Thin Films Prepared by Pulsed Laser Deposition

Yu Liao Xiu Wang

Year: 1999 Journal: Crystal Research and Technology Vol: 34 (7)Pages: 825-827 Publisher: Wiley

DOI: 10.1002/(sici)1521-4079(199908)34:7<825::aid-crat825>3.3.co;2-n

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Abstract

A pulsed Nd:YAG Laser was used to evaporate solid targets of KTiOAsO4 (KTA) at power densities of 0.6 to 2.0x109 W/cm2. KTA thin films were deposited on glass, Si (100). After proper annealing treatment, single phase, (orthorh-ombic) polycrystalline KTA thin films were obtained. Some propitious of these thin films were also examined.

Keywords:

Thin film Materials science Crystallite Annealing (glass) Pulsed laser deposition Laser Deposition (geology) Optoelectronics Analytical Chemistry (journal) Optics Metallurgy Nanotechnology Chemistry Chromatography

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Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Photorefractive and Nonlinear Optics

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

KTiOAsO4 Thin Films Prepared by Pulsed Laser Deposition

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