Injection Efficiency in Hot-Electron Devices Based on Monte Carlo Simulation

姜紫翔 Jiang Zixiang; 刘婷婷 Liu Tingting; 孙清心 Sun Qingxin; 张程 Zhang Cheng; 俞童 Yu Tong; Xiaofeng Li

doi:10.3788/lop202158.0504001

ScienceGate Book Chapters

JOURNAL ARTICLE

Injection Efficiency in Hot-Electron Devices Based on Monte Carlo Simulation

姜紫翔 Jiang Zixiang 刘婷婷 Liu Tingting 孙清心 Sun Qingxin 张程 Zhang Cheng 俞童 Yu Tong Xiaofeng Li

Year: 2021 Journal: Laser & Optoelectronics Progress Vol: 58 (5)Pages: 0504001-50400187

DOI: 10.3788/lop202158.0504001

Get Full-Text PDF Get Analytical Report

Keywords:

Monte Carlo method Electron Hot electron Statistical physics Computer science Computational physics Materials science Physics Nuclear physics Mathematics Statistics

Metrics

Cited By

0.18

FWCI (Field Weighted Citation Impact)

Refs

0.54

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Injection Efficiency in Hot-Electron Devices Based on Monte Carlo Simulation

Metrics

Citation History

Topics

Related Documents

MONTE-CARLO SIMULATION OF HOT ELECTRON SPECTRA

Monte-Carlo simulation of hot electron spectra

Monte Carlo simulation of electron transport efficiency of an InGaAs/InP hot-electron transistor

A Monte Carlo particle model of hot electron injection

Hydrodynamic hot-electron transport simulation based on the Monte Carlo method