Growth temperature influenced electrical properties of copper-oxide thin films

Abstract

Copper-o xide thin films are deposited by using reactive magnetron sputtering at different te mperatures and investigated the variation in the bonding configuration. We in -turn investigated how this bonding configuration influences its optical and electrica l properties such as bandgap, resistivity mobility etc. Even the room te mperature (RT) deposited films are crystalline in nature. Bandgap of 2.3 e V has been observed for the films deposited at 400°C. A decreasing trend was observed in hole concentration fro m 2×1018 to 7×1016 per cm3 with increase in substrate temperature from RT to 400°C. XPS investigations were also done to understand the bonding behavior.