JOURNAL ARTICLE

InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric

Abstract

Abstract not Available.

Keywords:
Materials science Optoelectronics Gate dielectric Metal Atomic layer deposition Layer (electronics) Dielectric Semiconductor Oxide Gate oxide Channel (broadcasting) Nanotechnology Transistor Electrical engineering Metallurgy Voltage Engineering

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Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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Appropriate fabrication procedure for InAlN metal‐oxide‐semiconductor structures with atomic‐layer‐deposited Al2O3

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Journal:   Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Year: 2014 Vol: 11 (3-4)Pages: 902-905
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