InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al<sub>2</sub>O<sub>3</sub> Gate Dielectric

Chia‐Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Heng‐Tung Hsu; Yasuyuki Miyamoto

doi:10.1149/ma2009-02/25/2112

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InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al₂O₃ Gate Dielectric

Chia‐Yuan Chang Edward Yi Chang Wei-Ching Huang Yung-Hsuan Su Hai-Dang Trinh Heng‐Tung Hsu Yasuyuki Miyamoto

Year: 2009 Journal: ECS Meeting Abstracts Vol: MA2009-02 (25)Pages: 2112-2112 Publisher: Institute of Physics

DOI: 10.1149/ma2009-02/25/2112

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Abstract

Abstract not Available.

Keywords:

Materials science Optoelectronics Gate dielectric Metal Atomic layer deposition Layer (electronics) Dielectric Semiconductor Oxide Gate oxide Channel (broadcasting) Nanotechnology Transistor Electrical engineering Metallurgy Voltage Engineering

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InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al₂O₃ Gate Dielectric

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