Diffusion and permeation of He, Ne, Ar, Kr and D2 through silicon oxide thin films

doi:10.1016/0042-207x(71)90140-0

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Diffusion and permeation of He, Ne, Ar, Kr and D2 through silicon oxide thin films

Year: 1971 Journal: Vacuum Vol: 21 (8)Pages: 359-360 Publisher: Elsevier BV

DOI: 10.1016/0042-207x(71)90140-0

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Keywords:

Permeation Silicon Diffusion Oxide Silicon oxide Thin film Materials science Chemistry Radiochemistry Analytical Chemistry (journal) Nanotechnology Optoelectronics Thermodynamics Chromatography Metallurgy Physics Membrane

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Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Diffusion and permeation of He, Ne, Ar, Kr and D2 through silicon oxide thin films

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