(Invited) GeSn Short-Wave Infrared Photodetectors

Abstract

Ge photodetector is very success in the Si-based photonics. But due to the limitation of the bandgap, Ge photodetector can’t be operated at light wavelength longer than 1600nm. The incorporation of Sn into Ge adjusts the band structures, and effectively shrinks the bandgap relative to pure Ge. This makes GeSn photodetector a promising device for short-wave infrared light detection (about 2000nm wavelength). In this paper, growth of GeSn alloys on Si and Ge substrates by MBE and sputtering will be introduced. GeSn PIN photodetectors were fabricated by CMOS compatible process. The performance of the GeSn PDs, such as dark current, response spectra and quantum efficiency will be presented and discussed.