High‐Performance Dopamine Sensors Based on Whole‐Graphene Solution‐Gated Transistors

Meng Zhang; Caizhi Liao; Yanli Yao; Zhike Liu; Fengfei Gong; Feng Yan

doi:10.1002/adfm.201400059

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JOURNAL ARTICLE

High‐Performance Dopamine Sensors Based on Whole‐Graphene Solution‐Gated Transistors

Meng Zhang Caizhi Liao Yanli Yao Zhike Liu Fengfei Gong Feng Yan

Year: 2014 Journal: Advanced Functional Materials Vol: 24 (8)Pages: 1036-1036 Publisher: Wiley

DOI: 10.1002/adfm.201400059

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Abstract

Adv. Funct. Mater, 2014, 7, 978–985. The authors regret that an older version of Figure 4 was published. The correct Figure 4 is shown here:

Keywords:

Materials science Graphene Regret Dopamine Nanotechnology Transistor Optoelectronics Computer science Electrical engineering Neuroscience Machine learning Psychology

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Conducting polymers and applications

Physical Sciences → Materials Science → Polymers and Plastics

Electrochemical sensors and biosensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

High‐Performance Dopamine Sensors Based on Whole‐Graphene Solution‐Gated Transistors

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