Defect vs. Nanocrystal Luminescence Emitted In Si - implanted SiO₂ Layer

Abstract

Photoluminescence (PL) from nanocrystalline Si has been a subject of considerable interests due to its potential application in Si-based optoelectronic devices. Quantum confinement effects of the electrons in nanocrystals can make those crystals strong light emitters. Recently, because of simplicity and compatibility with integrated circuits, and of the ease of controlling particle size and number density, ion implantation of Si into SiO2 is a suitable technique for obtaining such systems in a controlled manner [l]. Annealing is necessary to obtain crystalline precipitates from as-implanted samples. Thus, annealing conditions are critical for the final sizes of the nanocrystals. Moreover, luminescence mechanism is still controversial, and defect-related luminescence is sometimes confused with nanocrystal luminescence [2]. In the present study, we present defect vs. Nanocrystalline luminescence emitted in Si-implanted SiO2 layers.