Sinter-free inkjet-printed PEDOT:PSS/WO₃/ PEDOT:PSS flexible valency change memory

Abstract

Summary form only given, as follows. The complete presentation was not made available for publication as part of the conference proceedings. With the rapid proliferation of consumer electronics in our day to day lives, there is an ever increasing demand for flexible electronic devices which are low cost, easy to fabricate and deliver reliable performance. In this work, we report fabrication of symmetric PEDOT:PSS/WO 3 / PEDOT:PSS memory cells by inkjet printing on transparent, flexible PEN substrates. The cells show resistive switching behavior with two stable resistance states. The current conduction is determined by localized filamentary features, space charge limited in the high resistance state, facilitated through the migration of oxygen vacancies, at low voltages (< 2V) and Schottky emission dominates the current conduction for higher voltages (>2V) across the interface between the PEDOT:PSS electrode and dielectric WO 3 . The cells show good retentivity and endurance (> 6000 cycles). The cells are entirely sinter free and no electroforming is required to activate them. These characteristics make them suitable for the next generation of flexible non-volatile memory devices.