Performance Characterization of Double Material Gate-All-Around Nanowire MOSFET

Avishisht Kumar; Imran Ullah Khan

doi:10.1007/978-981-16-8826-3_35

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Performance Characterization of Double Material Gate-All-Around Nanowire MOSFET

Avishisht Kumar Imran Ullah Khan

Year: 2022 Lecture notes in networks and systems Pages: 419-428 Publisher: Springer International Publishing

DOI: 10.1007/978-981-16-8826-3_35

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Keywords:

Materials science Nanowire Transconductance Optoelectronics Indium arsenide Gate dielectric MOSFET Silicon Field-effect transistor Gallium arsenide Gate oxide Dielectric Transistor Electrical engineering Voltage

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Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Performance Characterization of Double Material Gate-All-Around Nanowire MOSFET

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