Design of High Power Density DC/DC Converter

Abstract

High power density is the development trend of power electronic equipment. Increasing the switching frequency can significantly reduce the volume of the converter, but traditional silicon devices will produce higher losses at high frequencies, resulting in lower power efficiency. The third-generation wide-bandgap semiconductor device gallium nitride (GaN) has a breakthrough in performance compared to traditional silicon devices. It has the characteristics of low loss and fast switching speed, and shows great advantages in the high-frequency field. At the same time, the choice of small size, high integration, and small leakage inductance planar transformer is beneficial to improve the power density and efficiency of the converter. This article uses gallium nitride devices and planar transformer technology to design a high-power density DC/DC converter at a higher frequency, and simulates the design through LTspice software, and finally produces a 30W experiment The prototype verifies the rationality of the design.