Tunable Electronic Properties of MoS2/SiC Heterostructures: A First-Principles Study

Shu Liu; Xiaodan Li; Dongping Meng; Shenghao Li; Xiong Chen; Taotao Hu

doi:10.1007/s11664-022-09613-8

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Tunable Electronic Properties of MoS2/SiC Heterostructures: A First-Principles Study

Shu Liu Xiaodan Li Dongping Meng Shenghao Li Xiong Chen Taotao Hu

Year: 2022 Journal: Journal of Electronic Materials Vol: 51 (7)Pages: 3714-3726 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-022-09613-8

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Keywords:

Monolayer Materials science Heterojunction Bilayer Superlattice Density functional theory Band gap Electronic band structure Optoelectronics Solid-state physics Condensed matter physics Electronic structure Nanotechnology Computational chemistry Chemistry Membrane Physics

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

MXene and MAX Phase Materials

Physical Sciences → Materials Science → Materials Chemistry

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Tunable Electronic Properties of MoS2/SiC Heterostructures: A First-Principles Study

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