Silicon Carbide Photonics Bridging Quantum Technology

Abstract

In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) has witnessed many advances, giving rise to electronic devices widely used in high-power and high-frequency applications. Recent research has revealed that SiC also exhibits unique optical properties that can be utilized for novel photonic devices. SiC is a transparent material from the UV to the infrared, possess nonlinear optical properties from the visible to the mid-infrared and it is a meta-material in the mid-infrared range. SiC fluorescence due to color centers can be associated with single photon emitters and can be used as spin qubits for quantum computation and communication networks and quantum sensing. This unique combination of excellent electronic, photonic and spintronic properties has prompted research to develop novel devices and sensors in the quantum technology domain. In this perspective, we highlight progress, current trends and prospects of SiC science and technology underpinning the development of classical and quantum photonic devices. Specifically, we lay out the main steps recently undertaken to achieve high quality photonic components, and outline some of the current challenges SiC faces to establish its relevance as a viable photonic technology. We will also focus on its unique potential to bridge the gap between classical and quantum photonics, and to technologically advance quantum sensing applications. We will finally provide an outlook on possible alternative applications where photonics, electronics, and spintronics could merge.