JOURNAL ARTICLE

Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors

Kun YangShulong WangTao HanHongxia Liu

Year: 2021 Journal:   Applied Surface Science Vol: 581 Pages: 152248-152248   Publisher: Elsevier BV
Keywords:
Materials science Annealing (glass) Dielectric Optoelectronics Electronics Transistor Gate dielectric Graphene Fabrication Nanotechnology Field-effect transistor Molybdenum disulfide Interface (matter) Engineering physics Electrical engineering Physics Voltage

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0.34
FWCI (Field Weighted Citation Impact)
54
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0.51
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Citation History

Topics

2D Materials and Applications
Physical Sciences →  Materials Science →  Materials Chemistry
Graphene research and applications
Physical Sciences →  Materials Science →  Materials Chemistry
Ferroelectric and Negative Capacitance Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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