Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors

Kun Yang; Shulong Wang; Tao Han; Hongxia Liu

doi:10.1016/j.apsusc.2021.152248

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Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors

Kun Yang Shulong Wang Tao Han Hongxia Liu

Year: 2021 Journal: Applied Surface Science Vol: 581 Pages: 152248-152248 Publisher: Elsevier BV

DOI: 10.1016/j.apsusc.2021.152248

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Keywords:

Materials science Annealing (glass) Dielectric Optoelectronics Electronics Transistor Gate dielectric Graphene Fabrication Nanotechnology Field-effect transistor Molybdenum disulfide Interface (matter) Engineering physics Electrical engineering Physics Voltage

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors

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