The results of modeling of the high-voltage silicon Schottky diode in the device-technological design system Synopsys Sentaurus TCAD was presented.
Min-Woo HaCheong Hyun RohDae Won HwangHong Goo ChoiHong Joo SongJun Ho LeeJung Ho ParkOgyun SeokJiyong LimMin‐Koo HanCheol-Koo Hahn
Min-Woo HaCheong Hyun RohDae Won HwangHong Goo ChoiHong Joo SongJun Ho LeeJung Ho ParkOgyun SeokJiyong LimMin Koo HanCheol Koo Hahn
Choong-Sun RheeJ.L. SaltichR. Zwernemann
Andrei VescanI. DaumillerP. GlucheWolfgang EbertE. Kohn
Q. ZhangV. MadangarliT. S. Sudarshan