〈012〉-oriented growth of the films LaNiO3/SiO2/Si(111) by pulsed laser deposition

Jiang Yin; Xuyuan Chen; Q. C. LI; X. Y. LIU; Z. G. LIU

doi:10.1023/a:1004424517453

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〈012〉-oriented growth of the films LaNiO3/SiO2/Si(111) by pulsed laser deposition

Jiang Yin Xuyuan Chen Q. C. LI X. Y. LIU Z. G. LIU

Year: 1998 Journal: Journal of Materials Science Vol: 33 (23)Pages: 5631-5635 Publisher: Springer Science+Business Media

DOI: 10.1023/a:1004424517453

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Keywords:

Materials science Scanning electron microscope Thin film Wafer Electrical resistivity and conductivity Ferroelectricity Electrode Deposition (geology) Optoelectronics Composite material Analytical Chemistry (journal) Nanotechnology Dielectric Electrical engineering

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Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Microwave Dielectric Ceramics Synthesis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Geophysics and Sensor Technology

Physical Sciences → Engineering → Ocean Engineering

〈012〉-oriented growth of the films LaNiO3/SiO2/Si(111) by pulsed laser deposition

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