Cross Sectional TEM Characterization of Epitaxial Silicon Film Grown using Hot Wire Chemical Vapor Deposition

Abstract

<p>We  have  investigated  epitaxial  growth  of  poly  crystalline  intrinsic  silicon  film  grown  on  glass  and  Si/SiO₂substrate using hot wire chemical vapour deposition technique. We have grown 20 nm nucleation layer at 400°C followed by an epitaxial growth of 200 nm thick at 600°C. Than 800 nm thick layer was grown on top using high hydrogen silane ratio  of  15:5.  Hydrogen  soaking was performed for  well  passivated  film.  Evaluation  of  different  layers  was  performed using cross sectional transmission electron microscopy. Poly crystalline as well as epitaxial and columnar growth regions were well observed. </p>