High‐Yield Ti₃C₂T_x MXene–MoS₂ Integrated Circuits

Abstract

Abstract It is very challenging to employ solution‐processed conducting films in large‐area ultrathin nanoelectronics. Here, spray‐coated Ti 3 C 2 T x MXene films as metal contacts are successfully integrated into sub‐10 nm gate oxide 2D MoS 2 transistor circuits. Ti 3 C 2 T x films are spray coated on glass substrates followed by vacuum annealing. Compared to the as‐prepared sample, vacuum annealed films exhibit a higher conductivity (≈11 000 S cm −1 ) and a lower work function (≈4.5 eV). Besides, the annealed Ti 3 C 2 T x film can be patterned through a standard cleanroom process without peeling off. The annealed Ti 3 C 2 T x film shows a better band alignment for n‐type transport in MoS 2 channel with small work function mismatch of 0.06 eV. The MoS 2 film can be uniformly transferred on the patterned Ti 3 C 2 T x surface and then readily processed through the cleanroom process. A large‐area array of Ti 3 C 2 T x MXene–MoS 2 transistors is fabricated using different dielectric thicknesses and semiconducting channel sizes. High yield and stable performance for these transistor arrays even with an 8 nm‐thick dielectric layer are demonstrated. Besides, several circuits are demonstrated, including rectifiers, negative‐channel metal–oxide–semiconductor (NMOS) inverters, and voltage‐shift NMOS inverters. Overall, this work indicates the tremendous potential for solution‐processed Ti 3 C 2 T x MXene films in large‐area 2D nanoelectronics.