Strain Induced Exciton Absorption Shift WS2 Monolayer Integrated Photodetector

Chandraman Patil; Rishi Maiti; Hamed Dalir; Volker J. Sorger

doi:10.1364/noma.2021.nom5b.2

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JOURNAL ARTICLE

Strain Induced Exciton Absorption Shift WS2 Monolayer Integrated Photodetector

Chandraman Patil Rishi Maiti Hamed Dalir Volker J. Sorger

Year: 2021 Journal: OSA Advanced Photonics Congress 2021 Pages: NoM5B.2-NoM5B.2

DOI: 10.1364/noma.2021.nom5b.2

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Abstract

We demonstrate the effect of local non-homogeneous strain on WS2 monolayer integrated on a SiN photonic waveguide showing a strong spectral responsivity (80mA/W) at exciton wavelength (620nm) and shift of ~10nm in photodetector device.

Keywords:

Responsivity Photodetector Exciton Monolayer Optoelectronics Materials science Photonics Strain (injury) Absorption (acoustics) Wavelength Condensed matter physics Physics Nanotechnology

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Fiber Optic Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Strain Induced Exciton Absorption Shift WS2 Monolayer Integrated Photodetector

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