Optoelectronic property comparison for isostructural Cu2BaGeSe4 and Cu2BaSnS4 solar absorbers

Yongshin Kim; Hannes Hempel; Sergiu Levcenco; Julie Euvrard; Ariel Bergmann; Oki Gunawan; Thomas Unold; Ian G. Hill; David B. Mitzi

doi:10.1039/d1ta05666b

JOURNAL ARTICLE

Optoelectronic property comparison for isostructural Cu₂BaGeSe₄ and Cu₂BaSnS₄ solar absorbers

Yongshin Kim Hannes Hempel Sergiu Levcenco Julie Euvrard Ariel Bergmann Oki Gunawan Thomas Unold Ian G. Hill David B. Mitzi

Year: 2021 Journal: Journal of Materials Chemistry A Vol: 9 (41)Pages: 23619-23630 Publisher: Royal Society of Chemistry

DOI: 10.1039/d1ta05666b

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Abstract

This study identifies key underlying differences in electronic properties of vacuum-deposited Cu 2 BaGeSe 4 and Cu 2 BaSnS 4 thin films.

Keywords:

Isostructural Materials science Property (philosophy) Key (lock) Thin film Copper Optoelectronics Crystallography Crystal structure Metallurgy Nanotechnology Computer science Chemistry

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Copper-based nanomaterials and applications

Physical Sciences → Materials Science → Materials Chemistry

Optoelectronic property comparison for isostructural Cu₂BaGeSe₄ and Cu₂BaSnS₄ solar absorbers

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Optoelectronic property comparison for isostructural Cu2BaGeSe4 and Cu2BaSnS4 solar absorbers

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