Synthesis and photoluminescence of Si-doped boron carbide nanobelts

Abstract

It is of great interest to synthesize boron carbide nanomaterials and explore their novel properties. We reported the synthesis of belt-like Si-doped boron carbide nanomaterials at a low temperature of 1500 °C with no catalyst. The structures and formation mechanism were investigated. Broad photoluminescence spectra between 400 and 500 nm were observed under 380 nm light excitation. The mechanism of the blue shift of the as-received samples in comparison with the reported boron carbide nanostructured materials is discussed.