High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

Bingyang Sun; Wei‐Ming Sun; Shan Li; Guoliang Ma; Weiyu Jiang; Zuyong Yan; Xia Wang; Yuehua An; Peigang Li; Zeng Liu; Weihua Tang

doi:10.1016/j.optcom.2021.127483

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High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

Bingyang Sun Wei‐Ming Sun Shan Li Guoliang Ma Weiyu Jiang Zuyong Yan Xia Wang Yuehua An Peigang Li Zeng Liu Weihua Tang

Year: 2021 Journal: Optics Communications Vol: 504 Pages: 127483-127483 Publisher: Elsevier BV

DOI: 10.1016/j.optcom.2021.127483

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Keywords:

Responsivity Photodetector Heterojunction Materials science Optoelectronics Metalorganic vapour phase epitaxy Ultraviolet Dark current Chemical vapor deposition Specific detectivity Thin film Optics Physics Nanotechnology Layer (electronics) Epitaxy

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

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