High-Power InGaN Lasers for Direct Diode Laser Processing

Abstract

We achieved 129 W continuous-wave operation of a single-chip InGaN laser in the 400-nm wavelength range. Novel wall-plug-efficiency approximation clarifies the relations between the thermal saturation power and laser parameters, which enable high-power device designs. With the direct diode laser scheme, this short-wavelength light source shows more efficient copper processing than that operating in the 900-nm range.