JOURNAL ARTICLE
A high aspect-ratio holey metalens
Soon Wei Daniel LimMaryna L. MeretskaFederico Capasso
Year: 2021 Journal: Conference on Lasers and Electro-Optics Vol: 13 Pages: SM4I.4-SM4I.4
Abstract
We design and fabricate metalenses comprising substrateless ultra-deep via-holes in silicon with aspect ratios exceeding 30:1. Deep holes allow us to circumvent fabrication and fragility constraints which limit the aspect ratios of free-standing meta-atoms.
Keywords:
Fabrication Silicon Materials science Aspect ratio (aeronautics) Fragility Optoelectronics Limit (mathematics) Optics Nanotechnology Physics
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Topics
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Nanowire Synthesis and Applications
Physical Sciences → Engineering → Biomedical Engineering
Advanced MEMS and NEMS Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
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