Análisis estadístico aplicado: problemas y soluciones mediante aplicaciones informáticas

Abstract

Threshold switches (TSs) are an effective approach for resolving the sneak path problem within a memristor array. VO₂ is a promising material for fabricating high-performance TSs. Here we report a single crystal VO₂-based TS device with high switching performance. The single crystal monoclinic VO₂ channel is obtained by electroforming in a composite vanadium oxide film consisting of VO₂, V₂O₅ and V₃O₇. The formation mechanism on single crystal VO₂ is thoroughly investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystal VO₂-based TS device exhibits better switching performance than the polycrystalline monoclinic VO₂ counterpart. The TS device based on a single crystal channel with the (2[combining macron]11) orientation exhibits a steep turn-on voltage slope of <0.5 mV dec^-1, a fast switching speed of 23 ns, an excellent endurance over 10⁹ cycles, a high I_on/I_off ratio of 143 and a low sample-to-sample variance. The enhanced switching performance originates from the single crystal feature and specified crystal orientation.