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808 nm/976 nm高效率、高功率半导体激光芯片

王贞福王贞福杨国文杨国文

Year: 2016 Journal: Chinese Journal of Lasers Vol: 43 (8)Pages: 0815001-0815001 Publisher: Science Press

DOI: 10.3788/cjl201643.0815001

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