Low resistivity annealed tin-doped zinc oxide thin films prepared by the sol gel technique

Javier Alejandro Berumen-Torres; J.G. Quiñones-Galván; Héctor Durán-Muñoz; C. Guzmán; G. Torres‐Delgado; José Juan Ortega-Sígala; José de Jesús Araiza Ibarra; R. Castanedo‐Pérez

doi:10.1016/j.mseb.2021.115134

JOURNAL ARTICLE

Low resistivity annealed tin-doped zinc oxide thin films prepared by the sol gel technique

Javier Alejandro Berumen-Torres J.G. Quiñones-Galván Héctor Durán-Muñoz C. Guzmán G. Torres‐Delgado José Juan Ortega-Sígala José de Jesús Araiza Ibarra R. Castanedo‐Pérez

Year: 2021 Journal: Materials Science and Engineering B Vol: 268 Pages: 115134-115134 Publisher: Elsevier BV

DOI: 10.1016/j.mseb.2021.115134

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Keywords:

Tin Materials science Electrical resistivity and conductivity Zinc Tin oxide Thin film Doping Grain size Sol-gel Band gap Analytical Chemistry (journal) Oxide Metallurgy Mineralogy Nanotechnology Chemistry

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper-based nanomaterials and applications

Physical Sciences → Materials Science → Materials Chemistry

Low resistivity annealed tin-doped zinc oxide thin films prepared by the sol gel technique

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