Optoelectronic Characteristics of In2S3-CNT Nanocomposite Thin Films for Photodetector Application

Jilu C. John; Tina Sebastian; Jincemon Cyriac; Alphonsa Paul; Adon Jose; Sadasivan Shaji; Saji Augustine

doi:10.1007/s11664-021-08804-z

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Optoelectronic Characteristics of In2S3-CNT Nanocomposite Thin Films for Photodetector Application

Jilu C. John Tina Sebastian Jincemon Cyriac Alphonsa Paul Adon Jose Sadasivan Shaji Saji Augustine

Year: 2021 Journal: Journal of Electronic Materials Vol: 50 (5)Pages: 2800-2812 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-021-08804-z

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Keywords:

Materials science Thin film Nanocomposite Photocurrent Raman spectroscopy Carbon nanotube Photodetector Optoelectronics Scanning electron microscope Chemical bath deposition Photoconductivity Band gap Nanotechnology Composite material Optics

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Optoelectronic Characteristics of In2S3-CNT Nanocomposite Thin Films for Photodetector Application

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