Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer

Qian Yang; Shi-yuan DU; Rong-si LUO

doi:10.37188/cjl.20200296

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Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer

Qian Yang Shi-yuan DU Rong-si LUO

Year: 2021 Journal: Chinese Journal of Luminescence Vol: 42 (2)Pages: 250-256 Publisher: Science Press

DOI: 10.37188/cjl.20200296

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Keywords:

Materials science Oxide Layer (electronics) Metal Channel (broadcasting) Optoelectronics Transistor Thin-film transistor Thin layer Nanotechnology Electrical engineering Metallurgy Computer science Telecommunications Voltage

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

CCD and CMOS Imaging Sensors

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Analytical Chemistry and Sensors

Physical Sciences → Chemical Engineering → Bioengineering

Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer

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