Solution-Processed Efficient Perovskite Nanocrystal Light-Emitting Device Utilizing Doped Hole Transport Layer

Abstract

Light-emitting devices (LEDs) with inorganic perovskite nanocrystals (PNCs) fabricated through the all-solution process have tremendous potential for new-generation illumination and displays on account of their large area and cost-effective manufacturing. However, the development of efficient solution-processed PNC LEDs remains challenge, which mainly results from the fact that only a few types of charge transport layers can be employed for the subsequent deposition steps, thus leading to injection barriers and charge injection imbalance inside these LEDs. Herein 4,4'-bis(carbazole-9-yl) biphenyl (CBP) is introduced as a dopant into the poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine) (TFB) hole transport layer (HTL), which efficiently modulates the mobility of charge carrier as well as the energy level of the HTL, resulting in the barrier-free injection of the charge carrier in the as-fabricated solution-processed PNC LEDs. Consequently, the luminance of red LEDs (688 nm) reaches 2990 cd m^-2, and the external quantum efficiency achieves 8.1%, which is the optimal performance for solution-processed PNC LEDs to date. Additionally, the turn-on voltage and roll-off have also been improved by the more balanced charge injection.