Study of dielectric properties of Se-Te-Zn ternary chalcogenide glasses

Abstract

This paper presents a comparison of the influence of zinc (Zn) addition on the dielectric properties of chalcogenide (Se80Te20)100-xZnx (x=4) for bulk sample and thin films. The multi-component (Se80Te20)100-xZnx (x=4) composition in bulk and thin film form through melt- quench and e-beam technique respectively. The dielectric parameters (ε's,ε") of (Se80Te20)100-xZnx (x=4) chalcogenide have been evaluated by different techniques and their dependence on frequency has been explained. The variation of dielectric property for bulk and thin film sample could be explained on the basis of intrinsic structural changes.