Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves
Jie YangRuge QuheShiqi LiuYuxuan PengXiaotian SunLiang ZhaBaochun WuBowen ShiChen YangJunjie ShiGuang TianChangsheng WangJing LüJinbo YangJinbo YangJinbo Yang
Abstract
Here we design a monolayer Fe3GeTe2 spin-valve device by attaching two ends to ferromagnetic electrodes. A high magnetoresistance of ~ 390% is obtained and significantly increased to 450 ~ 510% after the gates are introduced.
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