Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

Abstract

Deep ultraviolet (UV) photodetectors have wide applications both in civil and military fields. Many materials have been explored to realize deep UV photodetection. Amorphous gallium oxide (a‐GaO x ), as a member of transparent amorphous oxide semiconductors (TAOSs), has attracted a great deal of attention due to its ultrawide bandgap and scalable synthesis at room temperature. Plenty of researches have been focused on this topic in recent years. Herein, the latest progresses in the preparation methods of a‐GaO x using radio‐frequency sputtering, pulsed laser deposition, atomic layer deposition, and other deposition techniques are summarized. Dependence of the stoichiometry, crystallinity, optical, electrical, and morphological properties on different preparation parameters and doping/alloying elements is tentatively discussed, as well as those deep UV photodetectors based on a‐GaO x and related thin films. Finally, a short summary with further possible investigations is provided for a better understanding and development of a‐GaO x materials and photodetectors.