Abstract

We report light emission around 1200 nm from a vertical heterostructure consisting of M0S2 and WSe2 monolayers. The emission, arising from the fundamental interlayer exciton, can be tuned by nearly 100 nm by electrical gating.

Keywords:
Heterojunction Optoelectronics Monolayer Exciton Materials science Infrared Light emission Gating Optics Nanotechnology Physics Condensed matter physics

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Topics

2D Materials and Applications
Physical Sciences →  Materials Science →  Materials Chemistry
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Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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Physical Sciences →  Materials Science →  Materials Chemistry
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