High-Speed Broadband Plasmonic-Silicon Modulator Integrated with Epsilon-near-zero Conductive Oxide

Bokun Zhou; Erwen Li; Yunfei Bo; Wei-Che Hsu; Alan X. Wang

doi:10.1364/cleo_si.2020.sth3o.5

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High-Speed Broadband Plasmonic-Silicon Modulator Integrated with Epsilon-near-zero Conductive Oxide

Bokun Zhou Erwen Li Yunfei Bo Wei-Che Hsu Alan X. Wang

Year: 2020 Journal: Conference on Lasers and Electro-Optics Vol: 9 Pages: STh3O.5-STh3O.5

DOI: 10.1364/cleo_si.2020.sth3o.5

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Abstract

We demonstrated a compact broadband plasmonic-silicon electro-absorption modulator driven by epsilon-near-zero conductive oxide, covering the entire C-band from 1515nm to 1580nm wavelength. It achieved 3.5 GHz modulation bandwidth and 4.5 Gb/s data rate.

Keywords:

Broadband Plasmon Materials science Optoelectronics Bandwidth (computing) Silicon Modulation (music) Electrical conductor Electro-absorption modulator Optics Telecommunications Physics Semiconductor Computer science

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Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasmonic and Surface Plasmon Research

Physical Sciences → Engineering → Biomedical Engineering

Photonic Crystals and Applications

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

High-Speed Broadband Plasmonic-Silicon Modulator Integrated with Epsilon-near-zero Conductive Oxide

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