Yongwoo LeeJinsu YoonHyojin KimGeon-Hwi ParkJu Won JeonDae Hwan KimDong Myong KimMin‐Ho KangSung‐Jin Choi
Abstract Highly purified, preseparated semiconducting carbon nanotubes (CNTs) hold great potential for high-performance CNT network transistors due to their high electrical conductivity, high mechanical strength, and room-temperature processing compatibility. In this paper, we report our recent progress on CNT network transistors integrated on an 8-inch wafer. We observe that the key device performance parameters of CNT network transistors at various locations on an 8-inch wafer are highly uniform and that the device yield is impressive. Therefore, this work validates a promising path toward mass production and will make a significant contribution to the future field of wafer-scale CNT electronics.
Jun HirotaniS KishimotoY. Ohno
Boyuan TianXuelei LiangQiuping YanHan ZhangJiye XiaGuodong DongLian‐Mao PengSishen Xie
Ji CaoSebastian T. BartschAdrian M. Ionescu
Ji Cao (237887)Sebastian T. Bartsch (1631827)Adrian M. Ionescu (1595878)